电热和电磁处理装置基本技术条件 第 417 部分:碳化硅单晶生长装置
Basie specifications for eleetroheating and electromagnetic processinginstallations-Part 417:Silicon carbide crystal growth installations
Basie specifications for eleetroheating and electromagnetic processinginstallations-Part 417:Silicon carbide crystal growth installations
Basie specifications for electroheating and electromagnetie processing installations Part 416 : Polysilicon ingot furnace
Basie specifications for electroheating installations Part 415:Aluminum annealing furnace
Basie specification for electroheating and electromagnetie processing installations Part 414:Industrial gem furnace
Basic specifications for electroheat installations Part 413:Resistance furnaces using in the experiments
Basic specifications for electroheat installationsnPart 412 :Box-type quenching furnaces
Basic specifications for electroheat installations Part 411:Electroheat bath furnace
Basic specifications for electroheat installations Part 3:Induction electroheat installations
Basic specifications for eleetroheating and electromagnetie processing installations Part 101:General requirements for vacuum electroheating and electromagnetic processing installations
Basic specifications for electroheat installations Part 32 :A set of medium frequency coreless induction furnaceswith a voltage type frequency converter